Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

摘要

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature of 300 °C, a 14-nm-thick GaSb film aggregates, while a 20-nm-thick GaSb film remains continuous with a roughness of 1.74 nm. A GaSb film with a thickness of 20 nm consists of crystalline grains with a size of 9–16 nm. They were compressed by ~2%. For some GaSb grains, new epitaxial relationships have been found: GaSb(111)||Si(111¯) and GaSb[112¯]||Si[11¯0], GaSb(113)||Si(111¯) and GaSb[11¯0]||Si[11¯0], and GaSb(111¯)||Si(002) and GaSb[11¯0]||Si[11¯0].