Simulations of Bulk FinFETs with Body Gate Controlling Punch Through Leakage

摘要

An optimized structure of bulk FinFETs with low punch through leakage is studied by 3D-TCAD simulation. We use an additional gate, called body gate, to control the punch through leakage to achieve low junction leakage. Different body gate bias can be used to control FinFETs punch through leakage without additional dopant in the channel, leading to less random dopant fluctuation. A new process flow to make the bulk FinFET structure with body gate is also proposed.