Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

摘要

In this letter, for the first time, a novel vertical implantation is introduced in bulk FinFETs and used to form self-aligned halo and punch-through stop pocket (PTSP) at the same time. This implantation is carried out after dummy gate removal in the all-last high-/metal gate process. The formed halo and PTSP doping profiles improve short channel effect control and reduce variation. The process window related to the implantation is also discussed. This vertical implantation method is simple, effective, and has potential for future application of massive manufacture.