A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

摘要

For the first time, we propose a novel bottom spacer fin-shaped field-effect-transistor (FinFET) structure for logic applications suitable for system-on-chip (SoC) requirements. The proposed device achieved improved short-channel, power-delay, and self-heating performance compared with standard silicon-on-insulator FinFETs. Process aspects of the proposed device are also discussed in this paper. Physical insight into the improvement toward the short-channel performance and power dissipation is given through a detailed 3-D device/mixed-mode simulation. The self-heating behavior of the proposed device is compared with standard FinFETs by using detailed electro-thermal simulations. The proposed device requires an extra process step but enables smaller electrical width for self-loaded circuits and is an excellent option for SoC applications.