Heated implantation with amorphous Carbon CMOS mask for scaled FinFETs

摘要

A novel Source Drain Extension (SDE) implantation (imp) technique and its CMOS mask flow were developed for scaled FinFETs. An Arsenic (As) heated imp was demonstrated as a superior n-type SDE doping technique for narrow fins. In order to apply the high temperature imp, the CMOS mask flow using an amorphous Carbon (α-C) was developed.