Applications of advanced techniques of transmission electron microscope in characterization of semiconductor devices

摘要

In this paper, practical methods of quantification analysis of electron energy loss spectrum (EELS) and X-ray energy-dispersive spectrometry (EDX) will be introduced. Quantification analysis of SiGe by EELS and EDX will be compared. And it will also be presented how to use PCA to improve analysis of EELS. Dark-filed holography (DFH) has been used to measure channel strain with high spatial resolution at sub-nanometer scale, it will be shown first how to set-up holography fringe's spacing down to a few Angstrom which is related to spatial resolution of strain map by DFH. Then high spatial resolution DFH strain measurement in FinFet 3D devices will be demonstrated.