Influence of Different Pressures on Characteristics of Plasmas in PECVD Chamber

摘要

The plasma characteristics in the coating chamber will affect the uniformity of the film formation, which in turn determines the quality and the production yield of the wafers. To study the plasma characteristics under different pressures in the CVD chamber, the distribution of plasma potential, electron density and temperature under different pressures were simulated. The simulation results show that as the pressure increases, the plasma potential and electron temperature decrease, while the electron density increases. This work is of reference significance for improving the uniformity of the CVD process.