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HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber

机译:HF-等离子涂覆室或PECVD涂覆室,其用途以及使用该室电镀CD的方法

摘要

An Rf plasma enhanced chemical vapor deposition (PECVD) coating chamber for coating a planar dielectric substrate with a metallic layer or a plane dielectric substrate covered with a metallic layer. A reaction space is provided within the chamber and is confined between at least a flat metallic first electrode surface of a first electrode, and a second electrode surface. A substrate holder arrangement holds a substrate flat onto the first electrode surface and completely covers the first electrode with the first electrode surface towards the reaction space. The first and second electrode surface are connected to a source of Rf power. A dielectric substrate is coated with a metallic layer or a dielectric substrate covered with a metallic layer by an Rf-PECVD coating process. The substrate is deposited on a first electrode surface within a coating chamber, thereby completely covering the electrode surface by the dielectric substrate. Rf energy is coupled into the vacuum chamber exclusively via electrode surface and the dielectric substrate and a second electrode surface in the chamber.
机译:Rf等离子体增强化学气相沉积(PECVD)涂覆室,用于涂覆具有金属层的平面电介质基板或覆盖有金属层的平面电介质基板。反应空间设置在腔室内,并被限制在第一电极的至少平坦的金属第一电极表面和第二电极表面之间。衬底保持器装置将衬底平坦地保持在第一电极表面上,并以第一电极表面朝向反应空间完全覆盖第一电极。第一和第二电极表面连接到Rf电源。通过Rf-PECVD涂覆工艺,将电介质基板涂覆有金属层或覆盖有金属层的电介质基板。衬底沉积在涂覆室内的第一电极表面上,从而被介电衬底完全覆盖电极表面。射频能量仅通过电极表面和电介质基板以及真空室中的第二电极表面耦合到真空室中。

著录项

  • 公开/公告号US6432492B2

    专利类型

  • 公开/公告日2002-08-13

    原文格式PDF

  • 申请/专利权人 UNAXIS BALZERS AKTIENGESELLSCHAFT;

    申请/专利号US19980091004

  • 发明设计人 WEICHART JUERGEN;

    申请日1998-11-13

  • 分类号H05H1/24;

  • 国家 US

  • 入库时间 2022-08-22 00:50:16

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