The Method of Improving ALD SICN Film Uniformity

摘要

With the development of integrated circuits, smaller field effect transistor size has higher device sensitivity on spacer thickness. Furnace film ALD (Atomic layer deposition method) SICN has been widely used as offset spacer due to its high anti-Phosphoric acid corrosion and good uniformity. In this paper, a series of process parameters such as boat rotate speed, gas flow are optimized to achieve acceptable with in wafer and wafer to wafer thickness uniformity. The formation mechanisms and the proper solutions are discussed as well.