Record low metal — (CVD) graphene contact resistance using atomic orbital overlap engineering

摘要

In this work, for the first time, different techniques to strengthen atomic orbital overlap are proposed to engineer metal - graphene contact, while highlighting relevance of sp-hybridized carbon atoms in the contact region. The fundamental understanding of contact's quantum chemistry has resulted in record low contact resistance for CVD graphene when compared with the best reported till date for CVD as well as epitaxial graphene - metal contacts. Role of contact engineering in terms of reaching graphene FET's intrinsic limits with scalability is presented in detail. Finally, record high transistor performance is demonstrated as a result of engineered contacts.