Low-Resistance Ohmic Contacts to p-Type GaAs Using Zn/Pd/Au Metallization

摘要

We have fabricated the low resistance ohmic contacts to p type GaAs. Specific contact resistances as low as 7 x 10 to the minus 7th power ohmus - sq cm. have been obtained for contacts prepared by heat treating Zn/Pd/Au metallizations deposited on p-type epitaxial GaAs layers with an acceptor concentration of 1.5 times 10 to the 19th power per cu cm. These contacts are reproducible, simple to fabricate, exhibit excellent adhesion, and have a uniformly smooth surface morphology.