Low Resistive Edge Contacts to CVD‐Grown Graphene Using a CMOS Compatible Metal

Shaygan Mehrdad; Otto Martin; Sagade Abhay A.; Chavarin Carlos A.; Bacher Gerd; Mertin Wolfgang; Neumaier Daniel

摘要

Abstract >The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD‐grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150°C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><abstract xmlns =“http://www.wiley.com/namespaces/wiley”type =“main”xml：lang =“en”> <title type =“main”>抽象</ title> >剥削通过金属和石墨烯之间的大接触电阻阻碍了石墨烯的优异内在电子特性。边缘触点而不是顶部触点的形成是实现低欧姆接触的最有希望的解决方案之一。在本文中，通过光学光刻，使用CMOS相容金属的制造和表征大面积CVD-生长的单层石墨烯，即，即镍和铝。通过转移线法（TLM）提取接触电阻以及使用kelvin探针力学显微镜的直接测量表明，低宽度比接触电阻降至130Ωμm。发现接触电阻对于退火温度高达150°C的稳定性，使得进一步的装置加工。使用该接触方案进行边缘触点，制造基于CVD石墨烯的场效应晶体管，在1V偏置电压下基于0.63ms /μm的高跨导。</ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-19050/'>《Annalen der Physik》</a> <b style="margin: 0 2px;">|</b><span>2017年第11期</span><b style="margin: 0 2px;">|</b><span>共1页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Shaygan Mehrdad&option=202" target="_blank" rel="nofollow">Shaygan Mehrdad;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Otto Martin&option=202" target="_blank" rel="nofollow">Otto Martin;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Sagade Abhay A.&option=202" target="_blank" rel="nofollow">Sagade Abhay A.;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Chavarin Carlos A.&option=202" target="_blank" rel="nofollow">Chavarin Carlos A.;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Bacher Gerd&option=202" target="_blank" rel="nofollow">Bacher Gerd;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Mertin Wolfgang&option=202" target="_blank" rel="nofollow">Mertin Wolfgang;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Neumaier Daniel&option=202" target="_blank" rel="nofollow">Neumaier Daniel;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Advanced Microelectronic Center AachenAMO GmbH52074 Aachen Germany;</p> <p>Advanced Microelectronic Center AachenAMO GmbH52074 Aachen Germany;</p> <p>Advanced Microelectronic Center AachenAMO GmbH52074 Aachen Germany;</p> <p>Werkstoffe der ElektrotechnikUniversity Duisburg‐Essen47057 Duisburg Germany;</p> <p>Werkstoffe der ElektrotechnikUniversity Duisburg‐Essen47057 Duisburg Germany;</p> <p>Werkstoffe der ElektrotechnikUniversity Duisburg‐Essen47057 Duisburg Germany;</p> <p>Advanced Microelectronic Center AachenAMO GmbH52074 Aachen Germany;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/158.html" title="物理学">物理学;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=graphene&option=203" rel="nofollow">graphene;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=field‐effect transistors&option=203" rel="nofollow">field‐effect transistors;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=resistance&option=203" rel="nofollow">resistance;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=contacts&option=203" rel="nofollow">contacts;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=nickel&option=203" rel="nofollow">nickel;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=transconductance&option=203" rel="nofollow">transconductance;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kelvin probe force microscopy&option=203" rel="nofollow">Kelvin probe force microscopy;</a> </p> <div class="translation"> 机译：石墨烯;场效应晶体管;电阻;触点;镍;跨导;开尔文探针力显微镜; </div> </li> </ul> </div> </div> <div class="literature cardcommon" id="literaturereference" style="display:none"> <div class="similarity "> <h3 class="all_title" id="enpatent111">引文网络</h3> <div class="referencetab clearfix"> <ul id="referencedaohang"> <li dataid="referenceul">参考文献</li> <li dataid="citationul">引证文献</li> <li dataid="commonreferenceul">共引文献</li> <li dataid="commoncitationul">同被引文献</li> <li dataid="tworeferenceul">二级参考文献</li> <li dataid="twocitationul">二级引证文献</li> </ul> </div> <div class="reference_details" id="referenceList"> <ul id="referenceul"></ul> <ul id="citationul"></ul> <ul id="commonreferenceul"></ul> <ul id="commoncitationul"></ul> <ul id="tworeferenceul"></ul> <ul id="twocitationul"></ul> </div> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022608301.html">Low Resistive Edge Contacts to CVD‐Grown Graphene Using a CMOS Compatible Metal</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Shaygan Mehrdad&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Shaygan Mehrdad,</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Otto Martin&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Otto Martin,</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Sagade Abhay A.&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Sagade Abhay A.,</a> <a href="/journal-foreign-19050/" target="_blank" rel="nofollow" class="tuijian_authcolor">Annalen der Physik .</a> <span>2017</span><span>,第11期</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：使用CMOS兼容金属对CVD-生长的石墨烯的低电阻边缘触点</span> </p> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/academic-journal-foreign_advanced-packaging-ieee-transactions_thesis/020412566451.html">Characterization and Attenuation Mechanism of CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on Low-Resistivity Silicon Substrate</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lydia L. 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