Trap Layer Engineered Gate-All-Around Vertically Stacked Twin Si -Nanowire Nonvolatile Memory

摘要

Trap layer engineered gate-all-around (GAA) silicon nanowire SONOS memory showing excellent device performance is demonstrated for the first time. Nitride and silicon nanocrystal (Si-NC) has have been incorporated as the engineered charge trapping layer. Fast transient memory characteristic is shown owing to the nanowire channel structure. The device with embedded Si-NC achieves even faster higher memory speed and increased window, up to 3.2 V ΔV{sub}(th) shift for 1 μs and 6.25 V memory window. The nanowire based non-volatile SONOS memory is promising for the future high speed and low power NAND-type flash memory application.