NONVOLATILE MEMORY DEVICE INCLUDING A CHARGE TRAPPING LAYER WITH THE ALTERNATIVELY STACKED FIRST AND SECOND CHARGE TRAPPING LAYER

摘要

PURPOSE: A nonvolatile memory device is provided to improve a charge retention property of the nonvolatile memory device by suppressing the horizontal and vertical movement of the charges.;CONSTITUTION: A charge trapping layer(120) is formed between a semiconductor substrate and a gate electrode. A charge tunneling layer is formed between the charge trapping layer and the semiconductor substrate. A charge blocking layer is formed between the gate electrode and the charge trapping layer. A first charge trapping layer(122) and a second charge trapping layer(124) are repeatedly stacked on the charge trapping layer. The first charge trapping layer has a first energy band gap. The second charge trapping layer has a larger energy band gap than a first energy band gap.;COPYRIGHT KIPO 2010