Self-limiting laser thermal process for ultra-shallow junction formation of 50-nm gate CMOS

摘要

We have developed a novel LTP that dramatically enhances laser exposure window by controlling the heating process in a self-limiting way (SL-LTP). The Vth roll-offs of MOSFETs formed by this method were remarkably improved compared to those by RTA when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate CMOS devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.