首页>
外国专利>
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
展开▼
机译:具有超浅结的光电二极管,用于高量子效率的CMOS图像传感器及其形成方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
展开▼