Characterization and optimization of the stacked-PN junction photodiodes structure for energy harvesting CMOS image sensor

摘要

The characterization and optimization of the stacked-PN junction photodiodes structure for energy harvesting CMOS image sensor is presented. The proposed structure has three desired PN junctions located along a vertical line. With proper connection, these PN junctions can provide high voltage or large current for the different load conditions. They also improve the energy harvesting efficiency compared with the conventional single PN junction. Theoretical analysis and optimizations of this structure are given in the paper as well as the simulation results.