Inherently Radiation Hardened Electronics: An Examination of III-V Nanowire Transistors and Spin-Based Logic Devices

摘要

This paper presents novel design concepts currently pursued for the realization of inherently radiation hardened electronics. All-around gate oxide nano-wire transistors made from Si and III-V materials, are the first innovation examined. The carriers in these nanowires have dramatically increased mobility which can be used to increase processing speed, while the transistor geometry provides an avenue for inherent radiation hardness. Secondly, this work will discuss the development of a spin-based magneto-logic search engine. The manner in which the logic is written has the potential to be radiation hardened in addition to being nonvolatile. Realization of this type of logic will have an impact on both space electronics, as well as current terrestrial electronics.