Investigation of effects of nanowires numbers in N-channel and P-channel nanowire transistors on nanowire-CMOS characteristics

摘要

This paper is to study the characteristics of nanowire-CMOS and effect of increasing of numbers of nanowires in transistors on the nanowire-CMOS characteristics. This study used MuGFET simulation tool to produce the characteristics of nanowire transistors and used as input to MATLAB software to produce the characteristics of nanowire-CMOS. Increasing channel nanowires in P-channel transistor tends to improve the transfer characteristics of CMOS. Increasing channel nanowires in N-channel transistor tends to poorer transfer characteristics of CMOS.