A method for producing a nanowire - transistor, nanowire - transistor - structure and nanowire - transistor - field

摘要

In one exemplary embodiment of the invention, a method for manufacturing a nanowire - transistor is provided, in which at least a part of a semiconductor - carrier is oxidized, wherein the semiconductor - carrier, a first carrier - region and a second support - area which, on or above the first carrier - region is arranged. According to the inventive method, a part of the oxidized part is removed, so that an oxide - a spacer between a part of the second carrier - region and the first support - area is formed. Furthermore, a gate - region on or via at least a part of the second carrier - region, and there are formed a first source / drain - region and a second source / drain - region is formed.