Method of manufacturing a nanowire transistor, a nanowire transistor structure, a nanowire transistor field

摘要

A method of manufacturing a nanowire transistor includes oxidizing at least a portion of a semiconductor carrier. The semiconductor carrier includes a first carrier portion and a second carrier portion above the first carrier portion. A portion of the oxidized portion is removed, thereby forming an oxide spacer between a portion of the second carrier portion and the first carrier portion. A gate region is formed above at least a portion of the second carrier portion, and a first source/drain region and a second source/drain region are formed.