Extended high voltage HBTs in a high-performance BiCMOS process

摘要

An approach to integrate extended high voltage (EHV) npn SiGe heterojunction bipolar transitors (HBTs) in a high-performance BiCMOS process is presented. The EHV HBTs are based on a dedicated high-energy implanted phosphorus-doped subcollector. The epitaxially buried arsenic-doped subcollector of the conventional low-voltage (LV) and high-voltage (HV) HBTs, as well as the base-emitter configuration, which is shared between all three HBT types (i.e. LV, HV, and EHV), remains unchanged. The EHV devices that were fabricated are characterized by BVCE0 = 3.5 – 7.7 V, BVCB0 = 14 – 24 V, and peak-fT = 54 – 22 GHz. These figures of merit are tunable across the specified ranges by the subcollector implantation energy and dose. The integration of EHV HBTs in NXP's high-performance QUBiC4Xi process enables highly integrated transmitter and receiver ICs for microwave and millimeter-wave applications.