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Effect of Titanium on the Growth and Field Emission Properties of MPECVD Grown Multiwalled Carbon Nanotubes

机译:钛对MPECVD生长的多壁碳纳米管生长和场发射特性的影响

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The growth behavior and enhanced field emission properties of multiwalled carbon nanotubes were investigated using Ti as an underlayer and over layer. Ti of 10 nm thickness was deposited underneath Fe catalyst and their interaction behavior was observed for growth of carbon nanotubes. It was observed that underlayer deposition of Ti improves the growth of CNTs by acting as a barrier. In the other set of studies, Ti film of extremely small thickness (15 A) was post deposited over CNTs to investigate their field emission behavior. The turn on and threshold field values of Ti modified CNTs were found to be low ~ 0.8 V/μm and 2.65 V/μm, respectively, as compared to pure CNTs. HRTEM studies confirmed that Ti nanoclusters on post deposition adsorbs on the edges and walls of CNTs. This improved adhesion and bonding with CNTs is due to the unfilled d-shell of Ti, resulting in the modification of CNTs structure.
机译:以钛为底层和上覆层,研究了多壁碳纳米管的生长行为和增强的场发射性能。 10 nm厚的Ti沉积在Fe催化剂下,观察到它们的相互作用行为对碳纳米管的生长。观察到,Ti的下层沉积通过充当阻挡层而改善了CNT的生长。在另一组研究中,将极小的厚度(15 A)的Ti膜后沉积在CNT上,以研究其场发射行为。与纯碳纳米管相比,Ti改性碳纳米管的开启和阈值场值分别低至约0.8 V /μm和2.65 V /μm。 HRTEM研究证实,沉积后的Ti纳米团簇吸附在CNT的边缘和壁上。与CNT的这种改进的粘合性和结合性是由于Ti的d壳未填充而导致的,从而改变了CNT的结构。

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