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The effects of cesium deposition and gas exposure on the field emission properties of single wall and multiwall nanotubes.

机译:铯沉积和气体暴露对单壁和多壁纳米管场发射特性的影响。

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摘要

The effects of Cs deposition on the field emission (FE) properties of single-walled carbon nanotube (SWNT) bundles were studied. In addition, a comparative study was made on the effects of O2, Ar and H 2 gases on the field emission properties of SWNT bundles and multiwall carbon nanotubes (MWNTs).;We observed that Cs deposition decreases the turn-on field for FE by a factor of 2.1--2.9 and increases the FE current by 6 orders of magnitude. After Cs deposition, the FE current versus voltage (I-V) curves showed non-Fowler-Nordheim behavior at large currents consistent with tunneling from adsorbate states. At lower currents, the ratio of the slope of the FE I-V curves before and after Cs deposition was approximately 2.1. Exposure to N2 does not decrease the FE current, while exposure to O2 decreases the FE current. Our results show that cesiated SWNT bundles have great potential as economical and reliable vacuum electron sources.;We find that H2 and Ar gases do not significantly affect the FE properties of SWNTs or MWNTs. O2 temporarily reduces the FE current and increases the turn-on voltage of SWNTs. Full recovery of these properties occurred after operation in UHV. The higher operating voltages in an O2 environment caused a permanent decrease of FE current and increase in turn-on field of MWNTs. The ratios of the slopes before and after O2 exposure were approximately 1.04 and 0.82 for SWNTs and MWNTs, respectively. SWNTs compared to MWNTs would appear to make more economical and reliable vacuum electron sources.
机译:研究了Cs沉积对单壁碳纳米管(SWNT)束的场发射(FE)性能的影响。另外,对O2,Ar和H 2气体对SWNT束和多壁碳纳米管(MWNTs)的场发射特性的影响进行了比较研究。系数为2.1--2.9,并使FE电流增加了6个数量级。 Cs沉积后,FE电流对电压(I-V)曲线显示出大电流下的非Fowler-Nordheim行为,与从被吸附物态隧穿相一致。在较低电流下,Cs沉积前后的FE I-V曲线的斜率之比约为2.1。暴露于N2不会降低FE电流,而暴露于O2则会降低FE电流。我们的结果表明,封闭的单壁碳纳米管束具有作为经济可靠的真空电子源的巨大潜力。我们发现H2和Ar气体不会显着影响单壁碳纳米管或多壁碳纳米管的FE特性。 O2会暂时减小FE电流,并增加SWNT的开启电压。在特高压中运行后,这些特性得以完全恢复。 O2环境中较高的工作电压导致FE电流永久减小,MWNT的导通场增大。对于SWNT和MWNT,暴露于O 2之前和之后的斜率之比分别约为1.04和0.82。与MWNT相比,SWNT似乎可以制造出更经济,更可靠的真空电子源。

著录项

  • 作者

    Wadhawan, Atul.;

  • 作者单位

    University of North Texas.;

  • 授予单位 University of North Texas.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 130 p.
  • 总页数 130
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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