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GaN SINGLE CRYSTAL SUBSTRATE, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, FIELD EMISSION TYPE CATHODE DEVICE, FIELD EMISSION DISPLAY DEVICE AND ITS MANUFACTURING METHOD
GaN SINGLE CRYSTAL SUBSTRATE, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, FIELD EMISSION TYPE CATHODE DEVICE, FIELD EMISSION DISPLAY DEVICE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate, a nitride semiconductor epitaxial substrate, a field emission type cathode device and a field emission display device of which the dot structures of the substrate are easily formed, and to provide a method for manufacturing them.;SOLUTION: The GaN single crystal substrate 10 is characterized in that a plurality of micro-projections 14A, 14B are formed on the surface 12a by subjecting it to a heat-treatment process in a gas atmosphere at least containing NH3. The micro-projections 14A, 13B having dot structures on the substrate surface 12a are formed in the GaN single crystal substrate 10 by the heat-treatment. The dot structures in the GaN single crystal substrate 10 can be formed by a simple heat-treatment alone, which does not necessarily need a particular surface heat-treatment process or many steps.;COPYRIGHT: (C)2004,JPO&NCIPI
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