首页> 中文期刊> 《理论物理通讯:英文版》 >Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field

Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field

         

摘要

The statistic properties of photon emissions from single semiconductor quantum dots with V-type leveldriven by pulses are investigated theoretically.Based on quantum regression theorem and master equations,the dynamicequations of the second-order correlation function of the photon emissions are deduced.The calculated results reveal thatthe efficiency of single photon emissions from two orthogonal polarization eigenstates(|x〉and |y〉)reaches the maximumwhen the input pulses area is about π,and the probability of the cross-polarized single photon emission from |x〉and |y〉decreases with increasing of pulse width.

著录项

  • 来源
    《理论物理通讯:英文版》 |2008年第12期|1417-1421|共5页
  • 作者

    LIU Wen-Juan; LI Yao-Yi;

  • 作者单位

    School of Science;

    Hunan University of Technology;

    Zhuzhou 412008;

    China;

    Department of Physics;

    Wuhan University;

    Wuhan 430072;

    China;

    State Key Laboratory for Surface Physics;

    Institute of Physics;

    the Chinese Academy of Sciences;

    Beijing 100080;

    China;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 光学;
  • 关键词

    光学; 正电子发射; X射线; 计算机化成像;

    机译:光学;正电子发射;X射线;计算机化成像;
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