首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effects of a nanocomposite carbon buffer layer on the field emission properties of multiwall carbon nanotubes and nanofibers grown by hot filament chemical vapor deposition
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Effects of a nanocomposite carbon buffer layer on the field emission properties of multiwall carbon nanotubes and nanofibers grown by hot filament chemical vapor deposition

机译:纳米复合碳缓冲层对热丝化学气相沉积生长多壁碳纳米管和纳米纤维场发射性能的影响

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摘要

The electron field emission properties of multiwall carbon nanotubes (MWCNTs) grown on sulfur-incorporated nanocomposite carbon (n-C:S) buffer layer were investigated. Both the MWCNTs and the n-C:S films were synthesized in a hot filament chemical vapor deposition system at relatively low methane concentrations. The n-C:S buffer layer provides good contact and adhesion to the Mo substrate and good contact and interface to the MWCNTs. The presence of this buffer layer was shown to improve the reproducibility and stability of the field emission behavior of MWCNTs. The turn-on field (E_c) varies as much as 1.1 V/μm after high current density operation when there is no buffer layer, but variations up to only 0.3 V/μm are observed when the buffer layer is present. These results are interpreted in terms of the n-C:S buffer layer role, providing good adhesion and contact to the substrate side and to the MWCNTs, hence ensuring a high density of continuous paths for electrons from the substrate to the MWCNTs.
机译:研究了掺硫纳米复合碳(n-C:S)缓冲层上生长的多壁碳纳米管(MWCNT)的电子场发射特性。 MWCNT和n-C:S薄膜都是在热丝化学气相沉积系统中以相对较低的甲烷浓度合成的。 n-C:S缓冲层提供了与Mo基材的良好接触和粘附力以及与MWCNT的良好接触和界面。该缓冲层的存在显示出改善了MWCNT的场发射行为的可再现性和稳定性。在没有缓冲层的情况下,高电流密度操作后,导通电场(E_c)的变化高达1.1 V /μm,但是当存在缓冲层时,观察到的变化仅为0.3 V /μm。这些结果是根据n-C:S缓冲层的作用来解释的,提供了良好的附着力并与基板侧以及与MWCNT接触,从而确保了从基板到MWCNT的电子连续路径的高密度。

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