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Chemical Vapor Deposition of Vertically Aligned Carbon Nanotube Arrays: Critical Effects of Oxide Buffer Layers

机译:垂直对齐的碳纳米管阵列的化学气相沉积:氧化物缓冲层的关键影响。

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摘要

Vertically aligned carbon nanotubes (VACNTs) were synthesized on different oxide buffer layers using chemical vapor deposition (CVD). The growth of the VACNTs was mainly determined by three factors: the Ostwald ripening of catalyst nanoparticles, subsurface diffusion of Fe, and their activation energy for nucleation and initial growth. The surface roughness of buffer layers largely influenced the diameter and density of catalyst nanoparticles after annealing, which apparently affected the lifetime of the nanoparticles and the thickness of the prepared VACNTs. In addition, the growth of the VACNTs was also affected by the deposition temperature, and the lifetime of the catalyst nanoparticles apparently decreased when the deposition temperature was greater than 600 °C due to their serious Ostwald ripening. Furthermore, in addition to the number of catalyst nanoparticles, the density of the VACNTs was also largely dependent on their activation energy for nucleation and initial growth.
机译:使用化学气相沉积(CVD)在不同的氧化物缓冲层上合成了垂直排列的碳纳米管(VACNT)。 VACNTs的生长主要由三个因素决定:催化剂纳米粒子的奥斯特瓦尔德成熟,铁的表面下扩散以及它们的成核和初始生长活化能。缓冲层的表面粗糙度在很大程度上影响了退火后催化剂纳米颗粒的直径和密度,这显然影响了纳米颗粒的寿命和所制备的VACNT的厚度。此外,VACNTs的生长还受到沉积温度的影响,并且当沉积温度高于600°C时,由于其严重的奥斯特瓦尔德(Ostwald)成熟,催化剂纳米粒子的寿命明显缩短。此外,除了催化剂纳米颗粒的数量外,VACNTs的密度还很大程度上取决于其成核和初始生长的活化能。

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