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Effect of Titanium on the Growth and Field Emission Properties of MPECVD Grown Multiwalled Carbon Nanotubes

机译:钛对MPECVD种植多壁碳纳米管生长和场排放性能的影响

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The growth behavior and enhanced field emission properties of multiwalled carbon nanotubes were investigated using Ti as an underlayer and over layer. Ti of 10 nm thickness was deposited underneath Fe catalyst and their interaction behavior was observed for growth of carbon nanotubes. It was observed that underlayer deposition of Ti improves the growth of CNTs by acting as a barrier. In the other set of studies, Ti film of extremely small thickness (15 A) was post deposited over CNTs to investigate their field emission behavior. The turn on and threshold field values of Ti modified CNTs were found to be low ~0.8 V/μm and 2.65 V/μm, respectively, as compared to pure CNTs. HRTEM studies confirmed that Ti nanoclusters on post deposition adsorbs on the edges and walls of CNTs. This improved adhesion and bonding with CNTs is due to the unfilled d-shell of Ti, resulting in the modification of CNTs structure.
机译:使用Ti作为底层和层,研究了多壁碳纳米管的生长行为和增强的场排放性能。在Fe催化剂下面沉积10nm厚的Ti,并观察到它们的相互作用行为用于碳纳米管的生长。观察到Ti的底层沉积通过作为屏障而提高了CNT的生长。在其他一组研究中,厚度(15a)的Ti薄膜沉积在CNT上,以研究它们的场排放行为。与纯CNT相比,发现Ti改性CNT的接通和阈值场值分别为低〜0.8V /μm和2.65V /μm。 HRTEM研究证实,Ti纳米能器在CNT的边缘和墙壁上的沉积中。这种改进的粘合和与CNT的粘合是由于Ti的未填充的D-壳,导致CNT结构的改变。

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