Fractal nature of resitance of the drain-dopped channel of the gan-based heterostructure of the field effect transistor with bidimensional electron gas

摘要

It is shown that the specific resistivity of ρ 2D-channel of the drain-dropped HEMT-transistor based on GaN heterostructure in local approximation depends on its linear dimensions l and d and if they are getting smaller it may become even bigger, that specifies the fractal nature of this effect. In course of the experiment there was defined that the limit value of local approximation L=60 um specifies that linear sizes of the active elements of modern HEMT-transistors come into the sphere of local approximation and should subject to fractal geometry laws. To these laws we refer the dependence of electrophysical parameters of the facilities being measured on their sizes and slower dependence on the characterization sizes usually associated with linear dependence.