A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

著录项

• 来源
  《中国物理：英文版》 |2014年第8期|487-494|共8页
• 作者

  Mao Wei; She Wei-Bo; Yang Cui; Zhang Chao; Zhang Jin-Cheng; Ma Xiao-Hua; Zhang Jin-Feng;

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• 作者单位

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China;

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China;

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
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