Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System

摘要

We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 °C, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC. Many hexagonal-shaped crystals of approximately 100 μm in diameter were observed via a scanning electron microscope (SEM). A high resolution transmission electron microscope (HR-TEM) lattice image of the grown crystals showed a periodical structure with A-B stacking along the <0001> direction. These results indicated that the Li-based flux was useful for growing bulk 2H-SiC single crystals.