Single crystal melt level regulation apparatus, single crystal growth apparatus including the regulation apparatus, and single crystal melt level regulation method

摘要

single crystals melt level control, level control crystal growth apparatus and method for single-crystal melt having the same are disclosed. A single crystal growing apparatus according to the present invention is a train Majesty ingot of silicon single crystal growth chamber, and the single crystal in the crystal growth chamber for growing a silicon single crystal ingot is detected, and the temperature of the heat shield, the single crystal melt level based on the temperature of the heat shield and a single crystal control unit for controlling the melt level. And the single crystal melt level control device according to the invention is a single crystal growth chamber of a silicon single crystal ingot in the train the sire is a temperature sensing means for sensing the temperature of the heat shield, the lower end of the heat shield on the basis of the temperature of the silicon melt and the heat shield comprises the spacing of the melt gap calculation means for calculating a gap value of the melt, and the melt gap control means for controlling the elevation of the crucible for accommodating a silicon melt in accordance with the melt-receiving gap value from the value calculation means provides a gap between the surface of the melt. According to the present invention as described above, so obtaining a single crystal growth apparatus accurately control the distance between the heat shield and the surface of the melt in the single crystal growing apparatus, and enables a stable crystal growth, the need for operator to manually control the single crystal growth apparatus disappear.