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Crystal Nucleation and Growth Rates in Single-Component and Binary Melts under Conditions of Growth in a Poly crystalline Layer and in the Case of Single Crystals

机译:单晶和二元熔体在多晶层中生长条件下以及单晶情况下的晶体成核和生长速率

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摘要

Crystal nucleation and growth rates in single-component and binary melts are found using the proposed versatile procedure for determining kinetic parameters in processes involving phase transformations. These kinetic dependences on supercooling at the interface for the same single-component and binary melts are experimentally derived under comparable conditions in the formation and growth of single crystals and in a polycrystalline layer. A discrepancy between growth rates in a polycrystalline layer (constrained conditions) and for single crystals under the same supercooling is found. The rate of nucleation under constrained conditions is also lower. In practice, when calculating the process of crystallization, it is necessary to use kinetic parameters obtained for constrained conditions of the process. In studying the mechanism of crystal nucleation and growth, kinetic parameters derived for single crystals should be used.
机译:使用提议的通用程序在涉及相变的过程中确定动力学参数,可以发现单组分和二元熔体中的晶体成核和生长速率。在单晶的形成和生长以及多晶层中的可比条件下,通过实验得出了相同的单组分和二元熔体对界面处过冷的动力学依赖性。发现在相同的过冷条件下,多晶层(受约束条件)与单晶的生长速率之间存在差异。在受限条件下的成核速率也较低。实际上,在计算结晶过程时,有必要使用为该过程的约束条件获得的动力学参数。在研究晶体成核和生长的机理时,应使用单晶的动力学参数。

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  • 来源
    《Theoretical foundations of chemical engineering》 |2011年第3期|p.272-283|共12页
  • 作者

    Yu. A. Taran; A. Yu. Kholin;

  • 作者单位

    Lomonosov State Academy of Fine Chemical Technology, pr. Vernadskogo 86, Moscow, 119571 Russia;

    Lomonosov State Academy of Fine Chemical Technology, pr. Vernadskogo 86, Moscow, 119571 Russia;

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