首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Fabrication of Conducting Thin Films on the Surfaces of 7,7,8,8-Tetracyanoquinodimethane Single-Component and Charge-Transfer Complex Single Crystals: Nucleation, Crystal Growth, Morphology, and Charge Transport
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Fabrication of Conducting Thin Films on the Surfaces of 7,7,8,8-Tetracyanoquinodimethane Single-Component and Charge-Transfer Complex Single Crystals: Nucleation, Crystal Growth, Morphology, and Charge Transport

机译:在7,7,8,8-四氯喹啉二甲烷单组分和电荷转移复合单晶表面上制备导电薄膜:成核,晶体生长,形态和电荷传输

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摘要

Electrically conducting TTF-TCNQ thin films are fabricated on various molecular crystals containing 7,7,8,8-tetracyanoquinodimethane (TCNQ) by exposing a tetrathiafulvalene (TTF) vapor under ambient conditions. To systematically investigate the properties of the films, mixed stack TCNQ charge-transfer (CT) complex crystals with nine kinds of donors have been prepared as the substrates, and the morphology change of the films on the surfaces at the initial stage of the TTF vapor contact has been observed. When the substrate is a TCNQ single-component crystal, randomly oriented TTF TCNQ nanometer-size needle crystals are grown by the reaction with a TTF vapor. However, when the substrate is a TCNQ CT complex crystal, TTF TCNQ crystals are grown with alignment of their needle axis along the mixed-stack direction of the substrate. The surface roughness, the size of the needle crystals, and the degree of the dense packing of the needles have been found to systematically depend on the strength of the CT interactions in the substrate, and the sheet resistance also exhibits a systematic change. The resistance drop is rapid and remarkable when the donor of the substrate CT complex is weak. The difference in the morphology and the properties is considered to arise from the difference in the ease of nucleus formation and the rate of crystal growth of the TTF TCNQ nanocrystals.
机译:通过在环境条件下暴露四硫富瓦烯(TTF)蒸气,在包含7,7,8,8-四氰基喹二甲烷(TCNQ)的各种分子晶体上制备导电TTF-TCNQ薄膜。为了系统地研究薄膜的性能,制备了具有9种供体的混合堆叠TCNQ电荷转移(CT)复合晶体作为衬底,并在TTF蒸汽初始阶段改变了表面的薄膜形态。已经观察到接触。当基底是TCNQ单组分晶体时,通过与TTF蒸气的反应来生长随机取向的TTF TCNQ纳米尺寸的针状晶体。然而,当基板是TCNQ CT复合晶体时,TTF TCNQ晶体以其针轴沿着基板的混合堆叠方向对准而生长。已经发现表面粗糙度,针状晶体的尺寸以及针的致密堆积的程度系统地取决于基板中CT相互作用的强度,并且薄层电阻也表现出系统的变化。当底物CT络合物的供体较弱时,电阻下降迅速且显着。形貌和性质的差异被认为是由TTF TCNQ纳米晶体的核形成容易程度和晶体生长速率的差异引起的。

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