Growth of 2H-SiC single crystals in a Li-based flux

摘要

Growth of bulk 2H-SiC single crystals in a C-Li-Si ternary melt system was successful. The growth of 2H-SiC must be conducted at lower temperatures than that of other SiC poly-types. The lithium flux solved this problem, as it is usable for growth under 1000 ℃ due to its low melting temperature. Success in the growth of 2H-SiC single crystals in this study may unlock the potential for realizing high-performance electronic devices by fabricating the devices on 2H-SiC single-crystal substrates.