METHOD FOR PRODUCING 2H-SiC SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for simply and effectively forming only a 2H-SiC single crystal on an Si substrate.;SOLUTION: In the method for producing a 2H-SiC single crystal, an AlN film is formed on a principal plane of an Si (111) single crystal substrate, and a 2H-SiC single crystal is formed on the AlN film, wherein the normal of the principal plane forms an offcut angle of 0° and 30° with an orientation from a [111] direction to a [011] direction or to a [112] direction, and more preferably the normal thereof forms an offcut angle of 5° to 20° or of 6° to 22° both with the orientation from the [111] direction to the [011] direction.;COPYRIGHT: (C)2012,JPO&INPIT