A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress

机译：在正偏压下的NMOS高k器件中新的介电降解现象

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A new hole trap generation phenomenon during a positive bias stress in nMOS high-k transistors is reported. Fast transient hole trapping at the generated defects is manifested in a negative threshold voltage shift (DeltaV_th) observed after the

机译：据报道，新的孔陷阱生成现象在NMOS高k晶体管中的正偏压期间。生成的缺陷处的快速瞬态空穴捕获在后面观察到的负阈值电压移位（Deltav _{Th ）中。}

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《IEEE International Reliability Physics Symposium》|2008年||共5页
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Dawei Heh; Kirsch P.D.; Young C.D.; Bersuker G.;
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中图分类 O4-53;
关键词
MOSFET; electron traps; high-k dielectric thin films; hole traps; dielectric degradation phenomenon; electron detrapping; gate stack processing; hole trap generation phenomenon; interfacial SiOlt; subgt; 2lt; /subgt; layer; nMOS high-k devices; nitrogen species; positive bias;

机译：MOSFET;电子陷阱;高k电介质薄膜;孔陷阱;介电降解现象;电子脱网;栅极堆叠处理;孔阱生成现象;界面SiO＆lt;亚＆gt;层;NMOS高K器件;氮物种;积极偏见;

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1. Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks [J] . E. Amat, R. Rodriguez, M. Nafria, Microelectronic Engineering . 2009,第7a9期

机译：具有高k栅叠层的短沟道nMOS器件在交流应力下的沟道热载流子退化
2. New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices [J] . Miao Liao, Zhenghao Gan Microelectronics & Reliability . 2014,第11期

机译：漏极偏置为28 nm的高K金属栅极p-MOSFET器件对负偏置温度不稳定性下降的新见解
3. Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack [J] . E. Amat, T. Kauerauf, R. Degraeve, Microelectronic Engineering . 2010,第1期

机译：具有高k电介质堆栈的pMOS和nMOS短沟道晶体管中的沟道热载流子退化
4. A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress [C] . Dawei Heh, Kirsch P.D., Young C.D., IEEE International Reliability Physics Symposium . 2008

机译：在正偏压下的NMOS高k器件中新的介电降解现象
5. Flicker noise of scaled NMOS devices with high-K dielectrics and metal gate electrodes [D] . Zhang, Xiaochen 2009

机译：具有高K电介质和金属栅电极的按比例缩放的NMOS器件的闪烁噪声
6. Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers [O] . Jun Yong Bak, Youngho Kang, Shinhyuk Yang, -1

机译：利用IGZO和IGO沟道层的氧化物薄膜晶体管的漏极偏压降解现象的起源。
7. On the "switching defects" in the SiON and high-k gate dielectrics subjected to bias-temperature stressing [O] . Ann Ann Boo -1

机译：在偏压温度胁迫下的SiON和高k栅极电介质中的“切换缺陷”

A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress

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