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Negative-Bias Temperature Instability: Measurement and Degradation Mechanisms

机译:负偏压温度不稳定性:测量和降级机制

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This paper addresses two important aspects of negative-bias temperature instability (NBTI), namely measurement methodology and degradation mechanisms. An improved ultra-fast switching measurement method with sub-100 ns delay is presented. The method is based on customary pulsed current-voltage equipment and thus provides an attractive standard for NBTI measurement. Both linear and subthreshold drain current measurements are discussed and the relevant limitations addressed. In the discussion, it is shown that the gate voltage shift extracted through the computation of ∫ partial derivI_(d,lin)/g_m grossly overestimates the threshold voltage shift |ΔV_t| (I.e. the fraction of gate voltage shift due to interfacial trapped charge) because of mobility degradation. Neglecting this effect would result in an unduly pessimistic assessment of interfacial trapped charge generation. We demonstrate a better method that could accurately delineate both |ΔV_t| and low-field mobility degradation. In addition, results which indicate two distinct degradation mechanisms are presented. Experimental evidence that shows a "bipolar" (I.e. both acceptor- and donor-like) characteristic of stress induced interfacial traps is discussed. Finally, features of dynamic NBTI which do not conform to the reaction-diffusion model are highlighted.
机译:本文讨论了负偏置温度不稳定性(NBTI)的两个重要方面,即测量方法和降级机理。提出了一种改进的具有小于100 ns延迟的超快速开关测量方法。该方法基于常规的脉冲电流-电压设备,因此为NBTI测量提供了有吸引力的标准。讨论了线性和亚阈值漏极电流测量,并解决了相关限制。在讨论中,示出了通过计算∫偏导数I_(d,lin)/ g_m而提取的栅极电压偏移严重高估了阈值电压偏移|ΔV_t|。 (即,由于界面俘获电荷而引起的栅极电压偏移的分数)由于迁移率降低。忽略这种影响将导致对界面捕获电荷产生的过度悲观评估。我们展示了一种更好的方法,它可以准确地描绘|ΔV_t|和低场迁移率下降。此外,结果表明了两种不同的降解机理。讨论了显示应力引起的界面陷阱的“双极”(即受体样和供体样)特征的实验证据。最后,突出了动态NBTI的特征,这些特征不符合反应扩散模型。

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