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The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory

机译：停止氮化物的机械应力对隧道氧化物可靠性和NAND FLASH存储器数据保留特性的影响

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《Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International》|2005年|P.257-259|共3页
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Om J.; Eunseok Choi; Sejun Kim; Heegee Lee; Yongwook Kim; Heenyun Chang; Sungki Park; Gihyun Bae;
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1. Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- src="/images/tex/27758.gif" alt="text{g}_{mathrm {m}}"> Method [J] . Jeong Min-Kyu, Kang Ho-Jung, Joe Sung-Min, Electron Device Letters, IEEE . 2015,第6期

机译：使用保留特性和AC- 在3-D NAND闪存中的氮化物存储层中进行陷阱分析 src =“ / images / tex / 27758.gif” alt =“文本{g} _ {mathrm {m }}“> 方法
2. Retention Reliability Improvement of Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory with N_2O Oxidation Tunnel Oxide [J] . Jia-Lin Wu, Chin-Hsing Kao, Hua-Ching Chine, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第10Apt1期

机译：N_2O氧化隧道氧化物可提高氧化硅-氮化物-氧化硅-硅非易失性存储器的保留可靠性
3. Investigation of Retention Characteristics for Trap-Assisted Tunneling Mechanism in Sub 20-nm NAND Flash Memory [J] . Kyunghwan Lee, Hyungcheol Shin IEEE transactions on device and materials reliability . 2017,第4期

机译：20nm以下NAND闪存中陷阱辅助隧穿机制的保留特性研究
4. The Effect of Mechanical Stress from Stopping Nitride to the Reliability of Tunnel Oxide and Data Retention Characteristics of NAND FLASH Memory [C] . JAECHUL OM, EUNSEOK CHOI, SEJUN KIM, IEEE International Reliability Physics Symposium . 2005

机译：机械应力从氮化物中溅射到NAND闪存的隧道氧化物可靠性的影响
5. Circuits and systems for solid-state data storage using highly scaled NAND flash memory. [D] . Zhao, Kai. 2014

机译：使用大规模NAND闪存的固态数据存储电路和系统。
6. Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems [O] . Min Huang, Zhaoqing Liu, *, 2014

机译：非对称编程：基于MLC NAND闪存的传感器系统的高度可靠的元数据分配策略
7. Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide [O] . Ga-Won Lee, Sang-Youl Lee, Seung-Dong Yang, 2013

机译：具有调制隧穿氧化物的柱型氧化硅-氮化物-氧化硅-硅闪存单元
8. Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory [R] . Oldham, T. R., Chen, D., Friendlich, M., 2011

机译：辐射暴露对商用NaND闪存保留的影响

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