Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

摘要

A long-term 3000-hour test under on-state conditions (V_DS =25V, 6W/mm constant dissipated power) and off-state conditions (V _DS=46V, V_GS=-6V) on GaN/AlGaN/GaN HEMTs is presented. Trapping presence and hot-electrons effect are characterized by means of low-frequency techniques (low-frequency noise measurements, transconductance frequency dispersion, gate-lag). The on-state stress shows the most important degradation. Since our measurements point out to the creation of traps in the gate-to-drain surface region during the stress, this degradation is ascribed to the effect of hot-electrons