high electron mobility transistors; microwave field effect transistors; semiconductor heterojunctions; semiconductor device noise; aluminium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; equivalent circuits; HEMT heterostructure design; noise figure; epilayer structures; barrier aluminum composition; sapphire substrates; SiC substrates; drain current; frequency response; equivalent circuit models; 4 to 12 GHz; 5 GHz; AlGaN-GaN; AlN;
机译:外延结构对AlGaN / GaN HEMTs噪声系数的影响
机译:硅上具有低噪声系数的高性能0.1-muhbox {m} $栅极AlGaN / GaN HEMT
机译:栅极泄漏对AlGaN / GaN HEMT噪声系数的影响
机译:异质结构设计对Algan / GaN Hemts噪声形态的影响
机译:使用AlGaN / GaN HEMT的大功率,宽带微波F类功率放大器的设计
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明