首页> 外文会议>Indium Phosphide and Related Materials, 2003. International Conference on >Pure luminescence transitions from a small InAs/GaAs quantum dot exhibiting a single electron level
【24h】

Pure luminescence transitions from a small InAs/GaAs quantum dot exhibiting a single electron level

机译:来自显示单个电子能级的小InAs / GaAs量子点的纯发光跃迁

获取原文

摘要

Pure photoluminescence spectra originating from a single InAs/GaAs quantum dot, which is small enough to possess only one single-electron level, are demonstrated. A symmetric fine structure of the exciton and the biexciton is observed.
机译:证明了源自单个InAs / GaAs量子点的纯光致发光光谱,该光谱足够小以仅具有一个单电子能级。观察到激子和双激子对称的精细结构。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号