Single-electron levels of InAs/GaAs quantum dot: Comparison with capacitance spectroscopy

摘要

A 3D model of semiconductor quantum dot based on the single subband approach with energy dependence of the electron effective mass is applied to calculate the single-electron spectra of InAs/GaAs quantum dots. The results are in good agreement with the capacitance-voltage measurements by Miller et al. [Phys. Rev. B 56 (1997) 6764]. Non-parabolic contributions to the electron effective mass and the energy of states are evaluated. (c) 2005 Elsevier B.V. All rights reserved.