Comparative analysis of 1.3-/spl mu/m InGaAs quantum dots and InGaAsN quantum well lasers

机译：1.3- / spl mu / m InGaAs量子点与InGaAsN量子阱激光器的比较分析

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The characteristics of edge emitting InGaAsN QW and InAs/InGaAs QD lasers are comparatively discussed and correlated to the specific properties of the active region.

机译：比较地讨论了边缘发射InGaAsN QW和InAs / InGaAs QD激光器的特性，并将其与有源区的特定特性相关联。

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《Indium Phosphide and Related Materials, 2003. International Conference on》|2003年|p.261-262|共2页
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Egorov; A.Yu.; Ustinov; V.M.;
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中图分类无线电电子学、电信技术;
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indium compounds; gallium arsenide; III-V semiconductors; semiconductor quantum wells; semiconductor quantum dots; quantum well lasers; quantum dot lasers; semiconductor device measurement; InGaAs quantum dots; InGaAsN quantum well lasers; active region;

机译：铟化合物;砷化镓; III-V族半导体;半导体量子阱;半导体量子点;量子阱激光器;量子点激光器;半导体器件测量; InGaAs量子点; InGaAsN量子阱激光器;有源区;

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专利

1. 1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study [J] . Yong J.C.L., Rorison J.M., White I.H. IEEE Journal of Quantum Electronics . 2002,第12期

机译：1.3- / spl mu / m量子阱InGaAsP，AlGaInAs和InGaAsN激光材料增益：理论研究
2. Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-/spl mu/m emitting InGaAs quantum dots [J] . Sugawara M., Mukai K. IEEE journal of selected topics in quantum electronics . 2000,第3期

机译：自组装柱状和1.3- / spl mu / m发射InGaAs量子点的量子点激光器的性能和物理学
3. Low-threshold current, high-efficiency 1.3-/spl mu/m wavelength aluminum-free InGaAsN-based quantum-well lasers [J] . Gokhale M.R., Studenkov P.V. IEEE Photonics Technology Letters . 2000,第2期

机译：低阈值电流，高效1.3- / splμm/ m波长，不含铝的InGaAsN基量子阱激光器
4. Comparative analysis of 1.3-/spl mu/m InGaAs quantum dots and InGaAsN quantum well lasers [C] . Egorov A.Yu., Ustinov V.M. International Conference on Indium Phosphide and Related Materials . 2003

机译：1.3- / SPL MU / M INGAAS量子点和INGAASN量子阱激光的比较分析
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers [O] . Q Cao, SF Yoon, CY Liu, 2007

机译：窄脊波导高功率单模1.3μmInAs / InGaAs十层量子点激光器
7. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currentsud [O] . Liu H.Y., Childs D.T., Badcock T.J., 2005

机译：高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器，具有极低的连续波室温阈值电流 ud
8. Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission. [R] . Volovik, B. V., Kovsh, A. R., Passenberg, W., 2000

机译：用于长波发射的InGaasN / Gaas量子阱和量子点结构的光学特性。

Comparative analysis of 1.3-/spl mu/m InGaAs quantum dots and InGaAsN quantum well lasers

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