Modeling of metal-induced-lateral-crystallization mechanism for optimization of high performance thin-film-transistor fabrication

摘要

A model to predict metal-induced-lateral-crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.