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Integrated circuit modeling, design, and fabrication based on degradation mechanisms
Integrated circuit modeling, design, and fabrication based on degradation mechanisms
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机译:基于降级机制的集成电路建模,设计和制造
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摘要
An integrated circuit (IC) includes at least a first complementary MOS (CMOS) circuit, the first CMOS circuit comprising one or more first n-channel MOS (NMOS) transistors and one or more first p-channel MOS (PMOS) transistors, where the first NMOS transistors and the first PMOS transistors are arranged in the first CMOS circuit to drive at least a first common node of the first CMOS circuit. An average of the effective gate channel lengths of the first NMOS transistors (first NMOS average length) is at least 2% greater than an average of the effective gate channel lengths of the first PMOS transistors (first PMOS average length).
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