Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors

摘要

The polarization mechanism of oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) is not well understood. In this letter, a frequency-dependent circuit model for the oxide-based EDL TFTs is given. In addition, a quasi-EDL model is proposed to explain the conduction mechanism of this kind of EDL TFTs quantitatively. According to this model, in order to ensure an equivalent field-effect mobility up to 1.0 cm~2/V· s, the minimum ITO channel thickness is ～8.5nm for the self-assembled indium-tin-oxide (ITO)-based EDL TFTs. With the circuit model and the quasi-EDL model, our results may contribute to improved control of oxide-based TFTs.