^4fOptimizing CD performances from LD nozzle study of 0.15/0.13 μm lithography process on 300 mm wafers

摘要

^7fThe transition from 200mm to 300mm wafer presents many process challenges in the manufacturing of semiconductor devices. Larger wafer sizes have a significant impact on the Lithography process since many of its components involve spinning materials on wafer surfaces. The developing of photoresist is one of the most sensitive steps in the lithography process to changing wafer sizes. It is also one of the most critical since it impacts CD uniformity. This, has driven track vendors to design new develop nozzles such as the LD nozzle on TEL ACT 12 tracks. We focus this study on optimizing the key parameters associated with the LD nozzle such as; LD scan speed, gap, flow rate and tilt The impact of these different parameters on CD uniformity and defect density is described in this paper. Two different product reticles were used, both Logic Poly reticles at 0.13 μm and 0.15 μm Design Rules and KrF photoresist processes. CD uniformity data was acquired by varying the different photoresist developing parameters. Results indicate that better CD uniformity can be obtained by setting the exhause on during puddle time, LD nozzle gap value of 1.5 mm, flow rate of 35～40 ml/sec, and scan speed at 120～160 mm/sec for both 0.13 and 0.15 μm using KrF photoresists processes. Defect inspection results show these settings to have little impact on defect density.