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^4fOptimizing CD performances from LD nozzle study of 0.15/0.13 μm lithography process on 300 mm wafers

机译:^ 4FOPTIMING来自LD喷嘴研究的CD性能0.15 /0.13μm的光刻工艺300 mm晶片

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^7fThe transition from 200mm to 300mm wafer presents many process challenges in the manufacturing of semiconductor devices. Larger wafer sizes have a significant impact on the Lithography process since many of its components involve spinning materials on wafer surfaces. The developing of photoresist is one of the most sensitive steps in the lithography process to changing wafer sizes. It is also one of the most critical since it impacts CD uniformity. This, has driven track vendors to design new develop nozzles such as the LD nozzle on TEL ACT 12 tracks. We focus this study on optimizing the key parameters associated with the LD nozzle such as; LD scan speed, gap, flow rate and tilt The impact of these different parameters on CD uniformity and defect density is described in this paper. Two different product reticles were used, both Logic Poly reticles at 0.13 μm and 0.15 μm Design Rules and KrF photoresist processes. CD uniformity data was acquired by varying the different photoresist developing parameters. Results indicate that better CD uniformity can be obtained by setting the exhause on during puddle time, LD nozzle gap value of 1.5 mm, flow rate of 35~40 ml/sec, and scan speed at 120~160 mm/sec for both 0.13 and 0.15 μm using KrF photoresists processes. Defect inspection results show these settings to have little impact on defect density.
机译:^ 7F从200mm到300mm的过渡呈现在半导体器件的制造中的许多过程挑战。较大的晶片尺寸对光刻工艺产生重大影响,因为其许多组分涉及晶片表面上的纺丝材料。光致抗蚀剂的显影是光刻过程中最敏感的步骤之一,以改变晶片尺寸。它也是最重要的,因为它影响着CD均匀性。这使得驱动的轨道供应商设计新的开发喷嘴,例如TEL ACT 12轨道上的LD喷嘴。我们专注于优化与LD喷嘴相关的关键参数的研究; LD扫描速度,间隙,流速和倾斜这些不同参数对CD均匀性和缺陷密度的影响。使用两种不同的产品掩模,逻辑聚掩模在0.13μm和0.15μm的设计规则和KRF光致抗蚀剂过程中。通过改变不同的光致抗蚀剂显影参数来获得CD均匀性数据。结果表明,通过在水坑时间内设定剩余时间,LD喷嘴间隙值为1.5毫米,35〜40ml / sec的流速,扫描速度为120〜160mm / sec,可以获得更好的CD均匀性,并且为0.13的扫描速度为120〜160 mm / sec。使用KRF光致抗蚀剂的方法0.15μm。缺陷检测结果显示这些设置对缺陷密度几乎没有影响。

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