Development of Technology for Probing Very Fine Pitch and Very Small Area

摘要

A national project named "Ultra High-Density Electronic System Integration" was initiated in 1999 with the aim of stacking four or more thin chips with through-hole electrodes allocated with a 20μm pitch. The chips should be electrically tested before stacking so that only good chips are sent to the stacking process to minimize the yield loss of the structure. To realize this, the establishment of a contact technology for a pitch as fine as a 20μm electrode and an area as small as a 10μm electrode is indispensable. In this study, some contact methods used in wafer testing at present were compared, from which the silicon whisker probe, which was found to have the best potential for a 20μm pitch was selected. We itemized problems with 20蘭 pitch contact by trial production and evaluation of the silicon whisker probe. From now, to realize 20μm pitch contact, we plan to improve the probe characteristics and contacting process.